MPN

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

RS Stock No.:: 258-3803
Mfr. Part No.:: IPB180N10S403ATMA1
Brand:: Infineon

Infineon iPB Type N-Channel MOSFET, 180 A, 100 V Enhancement TO-263 IPB180N10S403ATMA1

Bulk discount available

Subtotal (1 unit)*

£4.17

(exc. VAT)

£5.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

3,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 9	£4.17
10 - 24	£3.96
25 - 49	£3.79
50 - 99	£3.63
100 +	£3.38

*price indicative

RS Stock No.:: 258-3803
Mfr. Part No.:: IPB180N10S403ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	250W
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	108nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 250W
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 108nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101