Infineon N-Channel MOSFET, 166 A, 120 V PG-TO263-3-2 IPB100N12S305ATMA1

View all MOSFETs
Save 27% when you buy 100 units

Subtotal (1 unit)*

£2.66

(exc. VAT)

£3.19

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 860 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9£2.66
10 - 24£2.39
25 - 49£2.23
50 - 99£2.08
100 +£1.94

*price indicative

Packaging Options:
RS Stock No.:
258-3796
Mfr. Part No.:
IPB100N12S305ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

166 A

Maximum Drain Source Voltage

120 V

Package Type

PG-TO263-3-2

Mounting Type

Surface Mount

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified
MSL1 up to 260°C peak reflow


Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links