Infineon iPB Type N-Channel MOSFET, 100 A, 120 V Enhancement TO-263 IPB100N12S305ATMA1

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£2.66

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£3.19

(inc. VAT)

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10 - 24£2.39
25 - 49£2.23
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100 +£1.94

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Packaging Options:
RS Stock No.:
258-3796
Mfr. Part No.:
IPB100N12S305ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

120V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

139nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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