Infineon HEXFET Type N-Channel MOSFET, 382 A, 24 V, 3-Pin TO-262 AUIRF1324WL
- RS Stock No.:
- 260-5055
- Mfr. Part No.:
- AUIRF1324WL
- Brand:
- Infineon
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Subtotal (1 unit)*
£6.37
(exc. VAT)
£7.64
(inc. VAT)
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In Stock
- 998 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 4 | £6.37 |
| 5 - 9 | £6.05 |
| 10 - 24 | £5.80 |
| 25 - 49 | £5.54 |
| 50 + | £5.16 |
*price indicative
- RS Stock No.:
- 260-5055
- Mfr. Part No.:
- AUIRF1324WL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 382A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Length | 9.65mm | |
| Standards/Approvals | No | |
| Width | 10.67 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 382A | ||
Maximum Drain Source Voltage Vds 24V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Length 9.65mm | ||
Standards/Approvals No | ||
Width 10.67 mm | ||
Automotive Standard No | ||
The Infineon Widelead HEXFET Power MOSFET is specifically design for automotive applications. It features175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
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