Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP

Subtotal (1 reel of 750 units)*

£1,518.00

(exc. VAT)

£1,821.75

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
750 +£2.024£1,518.00

*price indicative

RS Stock No.:
260-1203
Mfr. Part No.:
IPDQ60R065S7XTMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

HDSOP

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

N

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

195W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

15.1 mm

Length

15.5mm

Height

2.35mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

High pulse current capability

Increased system performance

More compact and easier design

Lower BOM or/and TCO over prolonged life time

Shock & vibration resistance

Related links