MPN

Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP

RS Stock No.:: 260-1201
Mfr. Part No.:: IPDQ60R040S7XTMA1
Brand:: Infineon

Infineon IPD Type N-Channel MOSFET, 207 A, 600 V N HDSOP

Subtotal (1 reel of 750 units)*

£2,454.00

(exc. VAT)

£2,944.50

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 750 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
750 +	£3.272	£2,454.00

*price indicative

RS Stock No.:: 260-1201
Mfr. Part No.:: IPDQ60R040S7XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	207A
	Maximum Drain Source Voltage Vds	600V
	Package Type	HDSOP
	Series	IPD
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	40mΩ
	Channel Mode	N
	Forward Voltage Vf	0.82V
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	83nC
	Maximum Power Dissipation Pd	272W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	15.5 mm
	Height	2.35mm
	Length	15.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 207A
	Maximum Drain Source Voltage Vds 600V
	Package Type HDSOP
	Series IPD
	Mount Type Surface
	Maximum Drain Source Resistance Rds 40mΩ
	Channel Mode N
	Forward Voltage Vf 0.82V
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 83nC
	Maximum Power Dissipation Pd 272W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 15.5 mm
	Height 2.35mm
	Length 15.1mm
	Automotive Standard No

Datasheet - IPDQ60R040S7XTMA1

The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.

High pulse current capability

Increased system performance

More compact and easier design

Lower BOM or/and TCO over prolonged life time

Shock & vibration resistance