Infineon N-Channel MOSFET Transistor, 236 A, 100 V PG-HSOF-8 IPT022N10NF2SATMA1
- RS Stock No.:
- 259-2655
- Mfr. Part No.:
- IPT022N10NF2SATMA1
- Brand:
- Infineon
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Subtotal (1 unit)*
£3.49
(exc. VAT)
£4.19
(inc. VAT)
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In Stock
- 1,796 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 9 | £3.49 |
| 10 - 24 | £3.14 |
| 25 - 49 | £2.93 |
| 50 - 99 | £2.75 |
| 100 + | £2.54 |
*price indicative
- RS Stock No.:
- 259-2655
- Mfr. Part No.:
- IPT022N10NF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 236 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PG-HSOF-8 | |
| Mounting Type | Surface Mount | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 236 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PG-HSOF-8 | ||
Mounting Type Surface Mount | ||
The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.
Broad availability from distribution partners
Excellent price/performance ratio
Ideal for high and low switching frequencies
Industry standard footprint through-hole package
High current rating
Excellent price/performance ratio
Ideal for high and low switching frequencies
Industry standard footprint through-hole package
High current rating
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