Infineon N-Channel MOSFET Transistor, 236 A, 100 V PG-HSOF-8 IPT022N10NF2SATMA1

Subtotal (1 reel of 1800 units)*

£3,816.00

(exc. VAT)

£4,572.00

(inc. VAT)

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Units
Per unit
Per Reel*
1800 +£2.12£3,816.00

*price indicative

RS Stock No.:
259-2653
Mfr. Part No.:
IPT022N10NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

236 A

Maximum Drain Source Voltage

100 V

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners
Excellent price/performance ratio
Ideal for high and low switching frequencies
Industry standard footprint through-hole package
High current rating

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