Infineon N-Channel MOSFET, 180 A, 60 V PG-TO263-7 IPB014N06NATMA1

View all MOSFETs

Subtotal (1 reel of 1000 units)*

£1,830.00

(exc. VAT)

£2,200.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 20 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£1.83£1,830.00

*price indicative

RS Stock No.:
259-1540
Mfr. Part No.:
IPB014N06NATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

The Infineon optimos 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make optimos 25V the best choice for the demanding requirements of voltage regulator solutions in servers, Datacom and telecom applications. Available in half bridge configuration (power stage 5x6).

N-channel enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Ultra low Rds(on)
100% avalanche tested

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links