Infineon SPD15P10P Type P-Channel MOSFET, 15 A, 100 V Enhancement, 3-Pin TO-252 SPD15P10PLGBTMA1
- RS Stock No.:
- 258-7790
- Mfr. Part No.:
- SPD15P10PLGBTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£8.45
(exc. VAT)
£10.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,380 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.69 | £8.45 |
| 25 - 45 | £1.456 | £7.28 |
| 50 - 120 | £1.37 | £6.85 |
| 125 - 245 | £1.268 | £6.34 |
| 250 + | £0.93 | £4.65 |
*price indicative
- RS Stock No.:
- 258-7790
- Mfr. Part No.:
- SPD15P10PLGBTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | SPD15P10P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.20Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 230W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -0.96V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series SPD15P10P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.20Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 230W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -0.96V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
The Infineon SIPMOS power transistor belongs to highly innovative OptiMOS family P channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics.
Enhancement mode
Avalanche rated
Pb free lead plating
RoHS compliant
Related links
- Infineon P-Channel MOSFET 100 V PG-TO252-3 SPD15P10PLGBTMA1
- Infineon P-Channel MOSFET 100 V PG-TO252-3 SPD04P10PGBTMA1
- Infineon P-Channel MOSFET 30 V PG-TO252-3-11 IPD50P03P4L11ATMA2
- Infineon P-Channel MOSFET 30 V PG-TO252-3-11 IPD80P03P4L07ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD50P04P4L11ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD85P04P407ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD90P04P4L04ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD90P04P405ATMA2