Infineon N-Channel MOSFET, 180 A, 60 V PG-TSDSON-8 IPB016N06L3GATMA1

Subtotal (1 reel of 1000 units)*

£1,580.00

(exc. VAT)

£1,900.00

(inc. VAT)

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1000 +£1.58£1,580.00

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RS Stock No.:
258-7065
Mfr. Part No.:
IPB016N06L3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TSDSON-8

Mounting Type

Surface Mount

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

The Infineon OptiMOS 3 power transistor is a perfect choice for synchronous rectification in switched mode power supplies, such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Very low on resistance RDS on
Ideal for fast switching applications
RoHS compliant
Highest system efficiency



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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