Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- RS Stock No.:
- 258-3877
- Mfr. Part No.:
- IPG20N06S2L35AATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.35
(exc. VAT)
£6.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 24,865 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.07 | £5.35 |
| 50 - 120 | £0.964 | £4.82 |
| 125 - 245 | £0.90 | £4.50 |
| 250 - 495 | £0.834 | £4.17 |
| 500 + | £0.696 | £3.48 |
*price indicative
- RS Stock No.:
- 258-3877
- Mfr. Part No.:
- IPG20N06S2L35AATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 65W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 65W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS power-transistor is dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction. Larger source lead frame connection for wire bonding and same thermal and electrical performance as a DPAK with the same die size.
Dual N-channel Logic Level - Enhancement mode
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
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