Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA2
- RS Stock No.:
- 258-3871
- Mfr. Part No.:
- IPD90P04P4L04ATMA2
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
£3.80
(exc. VAT)
£4.56
(inc. VAT)
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- 9,354 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.90 | £3.80 |
| 20 - 48 | £1.65 | £3.30 |
| 50 - 98 | £1.56 | £3.12 |
| 100 - 198 | £1.445 | £2.89 |
| 200 + | £1.33 | £2.66 |
*price indicative
- RS Stock No.:
- 258-3871
- Mfr. Part No.:
- IPD90P04P4L04ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -90A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Forward Voltage Vf | -1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -90A | ||
Maximum Drain Source Voltage Vds -40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Forward Voltage Vf -1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency and robust packages with superior quality and reliability.
P-channel - Logic Level - Enhancement mode
AEC qualified
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Related links
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- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
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