Infineon IPD Type P-Channel MOSFET, -50 A, -40 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 258-3843
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£882.50
(exc. VAT)
£1,060.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.353 | £882.50 |
*price indicative
- RS Stock No.:
- 258-3843
- Mfr. Part No.:
- IPD50P04P4L11ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -50A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 58W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -50A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 58W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD50P04P4L11ATMA2
- Infineon N-Channel MOSFET 40 V PG-TO252-3-313 IPD50N04S4L08ATMA1
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD85P04P407ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD90P04P4L04ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD90P04P405ATMA2
- Infineon P-Channel MOSFET 40 V PG-TO252-3-313 IPD70P04P409ATMA2
- Infineon N-Channel MOSFET 100 V PG-TO252-3-313 IPD60N10S412ATMA1
- Infineon P-Channel MOSFET 30 V PG-TO252-3-11 IPD50P03P4L11ATMA2