Infineon IPD Type P-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- RS Stock No.:
- 217-2518
- Mfr. Part No.:
- IPD50P04P413ATMA2
- Brand:
- Infineon
Subtotal (2500 units, on reels of 2500)*
£895.00
(exc. VAT)
£1,075.00
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 5,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.358 | £895.00 |
*price indicative
- RS Stock No.:
- 217-2518
- Mfr. Part No.:
- IPD50P04P413ATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 58W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 58W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IPD Series MOSFET, 40V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IPD50P04P413ATMA2
This MOSFET is a P-channel enhancement device designed to control high currents in demanding environments, providing a semiconductor switch capable of handling substantial drain-source loads while tolerating wide temperature ranges.
Features and Benefits:
• 40V drain-source rating enables medium-voltage switching applications
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins
• 50A continuous drain capability supports high-current loads
• 12.6mΩ Rds(on) minimises conduction losses for efficient operation
• 58W maximum power dissipation allows sustained power handling
• 39nC typical gate charge yields predictable switching energy requirements
• 20V gate voltage rating permits robust gate-drive margins
Applications
• Suitable for automotive power distribution modules
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies
• Ideal for high-current load switching in control units
• Used with thermal management systems for elevated-temperature operation
• Can be used for battery protection and power-path control
• Compatible with through-hole mounting on power assemblies
What temperature range can it reliably operate within?
It is specified to operate from -55°C up to 175°C.
What package type and mounting method are used?
It is supplied in a TO-252 package intended for through-hole mounting.
How does the gate-charge figure affect switching design?
A 39nC gate charge indicates the gate-drive energy and influences driver sizing and switching losses.
Is it suitable for use in automotive electronic systems?
It conforms to the AEC‑Q101 automotive device standard for suitability in vehicle environments.
What is the maximum allowable gate-to-source voltage?
The maximum VGS rating is 20V.
Related links
- Infineon IPD Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA2
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 IPD50P04P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement PG-TO-252 IPD50P03P4L11ATMA2
- Infineon IPD Type P-Channel MOSFET -30 V Enhancement, 3-Pin PG-TO-252
- Infineon IPD Type P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252