MPN

Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2

RS Stock No.:: 258-3869
Mfr. Part No.:: IPD90P04P405ATMA2
Brand:: Infineon

Infineon IPD Type P-Channel MOSFET, -90 A, -40 V Enhancement, 3-Pin TO-252 IPD90P04P405ATMA2

Bulk discount available

View bulk pricing options

Subtotal (1 pack of 2 units)*

£4.04

(exc. VAT)

£4.84

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Pack*
2 - 18	£2.02	£4.04
20 - 48	£1.675	£3.35
50 - 98	£1.575	£3.15
100 - 198	£1.455	£2.91
200 +	£1.355	£2.71

*price indicative

RS Stock No.:: 258-3869
Mfr. Part No.:: IPD90P04P405ATMA2
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-90A
	Maximum Drain Source Voltage Vds	-40V
	Series	IPD
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	118nC
	Forward Voltage Vf	-1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1, RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -90A
	Maximum Drain Source Voltage Vds -40V
	Series IPD
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 118nC
	Forward Voltage Vf -1V
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1, RoHS
	Automotive Standard AEC-Q101

Datasheet - IPD90P04P405ATMA2

Infineon IPD Series MOSFET, 40V Maximum Drain-Source Voltage, 125W Maximum Power Dissipation - IPD90P04P405ATMA2

This MOSFET is a P-channel enhancement-mode transistor designed for surface-mount power switching in demanding environments. It operates across a wide temperature span and is suitable for high-current applications where low on-resistance and robust gate handling are required. The device meets automotive reliability standards and environmental directives for use in regulated sectors.

Features and Benefits:

• 4.7mΩ Rds(on) reduces conduction losses and improves efficiency
• 90A continuous drain current supports high-current switching loads
• 118nC typical gate charge enables predictable switching performance
• 20V maximum gate-source tolerance allows flexible gate drive margins
• 125W power dissipation manages high power in Compact assemblies

Applications

• Suitable for high-current DC power distribution stages
• Ideal for automotive power modules under AEC‑Q101 requirements
• Used with Compact heatsinking in surface-mount power designs
• Can be used for synchronous switching in power converters

What temperature range can it withstand in operation?

It operates from -55°C up to 175°C, allowing use in wide thermal environments.

How does package choice affect assembly?

The TO-252 package facilitates surface-mount placement and thermal conduction to PCB landings.

What standards and directives has it met?

It conforms to DIN IEC 68-1 and is RoHS compliant as indicated in the specifications.

What channel characteristics determine switching behaviour?

The device is P-type enhancement mode, which defines polarity and gate-driven conduction behaviour.