Infineon BSC Type N-Channel MOSFET, 68 A, 120 V N, 8-Pin TDSON
- RS Stock No.:
- 258-0696
- Mfr. Part No.:
- BSC120N12LSGATMA1
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 258-0696
- Mfr. Part No.:
- BSC120N12LSGATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | BSC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.2mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.87V | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series BSC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.2mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.87V | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Length 5.49mm | ||
Height 1.1mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.
Low gate charge
Lower output charge
Logic level compatibility
Higher power density designs
Higher switching frequency
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