Infineon N-Channel MOSFET, 68 A, 120 V PG-TDSON-8 BSC120N12LSGATMA1

View all MOSFETs

Subtotal (1 pack of 2 units)*

£2.78

(exc. VAT)

£3.34

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 4,974 unit(s), ready to ship
Units
Per unit
Per Pack*
2 +£1.39£2.78

*price indicative

Packaging Options:
RS Stock No.:
258-0697
Mfr. Part No.:
BSC120N12LSGATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

120 V

Package Type

PG-TDSON-8

Mounting Type

Surface Mount

The Infineon OptiMOS 3 power MOSFETs in logic level are highly suitable for charging, adapter and telecom applications. The devices low gate charge reduces switching losses without compromising conduction losses. Logic level MOSFETs allow operations at high switching frequencies and due to a low gate threshold voltage can be driven directly from microcontrollers.

Low gate charge
Lower output charge
Logic level compatibility
Higher power density designs
Higher switching frequency


Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links