MPN

Infineon AUIRFS Type N-Channel MOSFET, 17 A, 20 V, 3-Pin TO-263 AUIRFZ24NSTRL

RS Stock No.:: 249-6878
Mfr. Part No.:: AUIRFZ24NSTRL
Brand:: Infineon

Infineon AUIRFS Type N-Channel MOSFET, 17 A, 20 V, 3-Pin TO-263 AUIRFZ24NSTRL

Bulk discount available

Subtotal (1 pack of 2 units)*

£3.88

(exc. VAT)

£4.66

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

604 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£1.94	£3.88
20 - 48	£1.575	£3.15
50 - 98	£1.455	£2.91
100 - 198	£1.375	£2.75
200 +	£1.265	£2.53

*price indicative

RS Stock No.:: 249-6878
Mfr. Part No.:: AUIRFZ24NSTRL
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	20V
	Package Type	TO-263
	Series	AUIRFS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 20V
	Package Type TO-263
	Series AUIRFS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AUIRFZ24NSTRL

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

Advance planner technology

LowOn-Resistance

Dynamic dV/dT Rating

175 C operating temperature

Fast switching