Infineon AUIRFS Type N-Channel MOSFET, 72 A, 20 V, 3-Pin TO-263
- RS Stock No.:
- 249-6875
- Mfr. Part No.:
- AUIRFS4127TRL
- Brand:
- Infineon
Subtotal (1 reel of 800 units)*
£2,288.00
(exc. VAT)
£2,744.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 + | £2.86 | £2,288.00 |
*price indicative
- RS Stock No.:
- 249-6875
- Mfr. Part No.:
- AUIRFS4127TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TO-263 | |
| Series | AUIRFS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TO-263 | ||
Series AUIRFS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
Advance planner technology
LowOn-Resistance
Dynamic dV/dT Rating
175 C operating temperature
Fast switching
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