Infineon AUIRFS Type N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-252 AUIRLR3410TRL

RS Stock No.:: 244-2883
Mfr. Part No.:: AUIRLR3410TRL
Brand:: Infineon

Infineon AUIRFS Type N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-252 AUIRLR3410TRL

Bulk discount available

Subtotal (1 pack of 2 units)*

£4.58

(exc. VAT)

£5.50

(inc. VAT)

FREE delivery for orders over £50.00

Last RS stock

Final 1,444 unit(s), ready to ship

Units	Per unit	Per Pack*
2 - 18	£2.29	£4.58
20 - 48	£1.905	£3.81
50 - 98	£1.765	£3.53
100 - 198	£1.65	£3.30
200 +	£1.53	£3.06

*price indicative

RS Stock No.:: 244-2883
Mfr. Part No.:: AUIRLR3410TRL
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	100V
	Series	AUIRFS
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 100V
	Series AUIRFS
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AUIRLR3410TRL

The Infineon AUIRLR3410TRL specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Low On-Resistance

Logic Level Gate Drive

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *