Infineon N-Channel MOSFET, 127 A, 1200 V, 3-Pin TO-247 IMW120R020M1HXKSA1

Subtotal (1 tube of 240 units)*

£3,654.96

(exc. VAT)

£4,386.00

(inc. VAT)

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RS Stock No.:
248-6668
Mfr. Part No.:
IMW120R020M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

127 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

The Infineon CoolSiC 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.

VDSS - 1200 V at T - 25°C
IDCC - 98 A at T - 25°C
RDS(on) - 19 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance

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