- RS Stock No.:
- 248-6668
- Mfr. Part No.:
- IMW120R020M1HXKSA1
- Brand:
- Infineon
480 In stock - FREE next working day delivery available
Price Each (In a Tube of 240)
£14.54
(exc. VAT)
£17.45
(inc. VAT)
Units | Per unit | Per Tube* |
---|---|---|
240 + | £14.54 | £3,489.60 |
*price indicative
- RS Stock No.:
- 248-6668
- Mfr. Part No.:
- IMW120R020M1HXKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon CoolSiC 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
VDSS - 1200 V at T - 25°C
IDCC - 98 A at T - 25°C
RDS(on) - 19 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
IDCC - 98 A at T - 25°C
RDS(on) - 19 mohm at VGS - 18 V, T - 25°C
Very low switching losses
Short circuit withstand time 3 microsecond
Benchmark gate threshold voltage, VGS(th) - 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 127 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Number of Elements per Chip | 1 |
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