Infineon N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-247 IMW120R090M1HXKSA1

Subtotal (1 tube of 240 units)*

£768.00

(exc. VAT)

£921.60

(inc. VAT)

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  • Plus 999,999,600 unit(s) shipping from 26 February 2026
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240 +£3.20£768.00

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RS Stock No.:
244-2922
Mfr. Part No.:
IMW120R090M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Number of Elements per Chip

1

The Infineon IMW120R090M1HXKSA1 MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Very low switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses

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