Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R140M1HXKSA1

RS Stock No.:: 244-2926
Mfr. Part No.:: IMW120R140M1HXKSA1
Brand:: Infineon

Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247 IMW120R140M1HXKSA1

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£5.35

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£6.42

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Plus 152 unit(s) shipping from 29 December 2025

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Units	Per unit
1 - 4	£5.35
5 - 9	£5.08
10 - 24	£4.86
25 - 49	£4.66
50 +	£4.33

*price indicative

RS Stock No.:: 244-2926
Mfr. Part No.:: IMW120R140M1HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	52A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-247
	Series	IMW
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 52A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-247
	Series IMW
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMW120R140M1HXKSA1

The Infineon IMW120R140M1HXKSA1 MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Very low switching losses

Threshold-free on state characteristic

Wide gate-source voltage range

Benchmark gate threshold voltage, VGS(th) = 4.5V

0V turn-off gate voltage for easy and simple gate drive

Fully controllable dV/dt

Robust body diode for hard commutation

Temperature independent turn-off switching losses