- RS Stock No.:
- 244-2925
- Mfr. Part No.:
- IMW120R140M1HXKSA1
- Brand:
- Infineon
Available to back order for despatch 07/04/2026
Added
Price Each (In a Tube of 240)
£4.71
(exc. VAT)
£5.65
(inc. VAT)
Units | Per unit | Per Tube* |
240 + | £4.71 | £1,130.40 |
*price indicative |
- RS Stock No.:
- 244-2925
- Mfr. Part No.:
- IMW120R140M1HXKSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon IMW120R140M1HXKSA1 MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Very low switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 19 A |
Maximum Drain Source Voltage | 1200 V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Number of Elements per Chip | 1 |
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