Infineon N-Channel MOSFET, 56 A, 1200 V, 3-Pin TO-247 IMW120R030M1HXKSA1
- RS Stock No.:
- 244-2920
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Brand:
- Infineon
Subtotal (1 tube of 240 units)*
£2,563.92
(exc. VAT)
£3,076.80
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 240 + | £10.683 | £2,563.92 |
*price indicative
- RS Stock No.:
- 244-2920
- Mfr. Part No.:
- IMW120R030M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon IMW120R030M1HXKSA1 MOSFET in comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.
Very low switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Threshold-free on state characteristic
Wide gate-source voltage range
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
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