Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247

RS Stock No.:: 244-2920
Mfr. Part No.:: IMW120R030M1HXKSA1
Brand:: Infineon

Infineon IMW Type N-Channel MOSFET, 52 A, 75 V N, 3-Pin TO-247

Subtotal (1 tube of 240 units)*

£2,563.92

(exc. VAT)

£3,076.80

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 25 May 2026

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Units	Per unit	Per Tube*
240 +	£10.683	£2,563.92

*price indicative

RS Stock No.:: 244-2920
Mfr. Part No.:: IMW120R030M1HXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	52A
	Maximum Drain Source Voltage Vds	75V
	Series	IMW
	Package Type	TO-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	N
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 52A
	Maximum Drain Source Voltage Vds 75V
	Series IMW
	Package Type TO-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode N
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMW120R030M1HXKSA1

The Infineon IMW120R030M1HXKSA1 MOSFET in comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.

Very low switching losses

Threshold-free on state characteristic

Wide gate-source voltage range

Benchmark gate threshold voltage, VGS(th) = 4.5V

0V turn-off gate voltage for easy and simple gate drive

Fully controllable dV/dt

Robust body diode for hard commutation

Temperature independent turn-off switching losses