Infineon IPD Type P-Channel MOSFET, 180 A, 100 V N, 3-Pin TO-252 IPD650P06NMATMA1
- RS Stock No.:
- 244-0880
- Mfr. Part No.:
- IPD650P06NMATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.43
(exc. VAT)
£2.916
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,162 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.215 | £2.43 |
| 20 - 48 | £1.02 | £2.04 |
| 50 - 98 | £0.95 | £1.90 |
| 100 - 198 | £0.885 | £1.77 |
| 200 + | £0.83 | £1.66 |
*price indicative
- RS Stock No.:
- 244-0880
- Mfr. Part No.:
- IPD650P06NMATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | IPD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series IPD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET OptiMOSTM Power Transistor has Pb-free lead plating, RoHS compliant and is halogen-free according to IEC61249-2-21.
P-Channel
Very low on-resistance RDS(on)
100% avalanche tested
Normal Level
Enhancement mode
Related links
- Infineon P-Channel MOSFET 60 V, 3-Pin DPAK IPD650P06NMATMA1
- Infineon P-Channel MOSFET Transistor 100 V, 3-Pin DPAK IPD11DP10NMATMA1
- Infineon P-Channel MOSFET -60 V, 3-Pin DPAK IPD40DP06NMATMA1
- Infineon P-Channel MOSFET 60 V, 3-Pin DPAK IPD25DP06LMATMA1
- Infineon P-Channel MOSFET -60 V, 3-Pin DPAK SPD18P06PGBTMA1
- Infineon P-Channel MOSFET -60 V, 3-Pin DPAK IPD25DP06NMATMA1
- Infineon P-Channel MOSFET 60 V, 3-Pin DPAK IPD380P06NMATMA1
- Infineon P-Channel MOSFET -60 V, 3-Pin DPAK IPD900P06NMATMA1


