Infineon HEXFET N-Channel MOSFET, 192 A, 100 V, 3-Pin D2PAK IRF100S201

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Subtotal (1 pack of 2 units)*

£5.60

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£6.72

(inc. VAT)

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Per Pack*
2 - 18£2.80£5.60
20 - 48£2.465£4.93
50 - 98£2.295£4.59
100 - 198£2.125£4.25
200 +£1.99£3.98

*price indicative

Packaging Options:
RS Stock No.:
242-0991
Mfr. Part No.:
IRF100S201
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Number of Elements per Chip

1

The Infineon single N-channel power MOSFET have 192 A maximum drain current. The operating temperature of power MOSFET is -55 °C to 175 °C. It is ideal for low frequency applications requiring performance and ruggedness.

Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
High-current rating

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