MPN

Infineon IPA Type N-Channel MOSFET, 84 A, 40 V N, 3-Pin TO-220 IPA80R1K2P7XKSA1

RS Stock No.:: 242-0986
Mfr. Part No.:: IPA80R1K2P7XKSA1
Brand:: Infineon

Infineon IPA Type N-Channel MOSFET, 84 A, 40 V N, 3-Pin TO-220 IPA80R1K2P7XKSA1

Bulk discount available

Subtotal (1 pack of 2 units)*

£2.66

(exc. VAT)

£3.20

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 414 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£1.33	£2.66
20 - 48	£1.195	£2.39
50 - 98	£1.135	£2.27
100 - 198	£1.05	£2.10
200 +	£0.97	£1.94

*price indicative

RS Stock No.:: 242-0986
Mfr. Part No.:: IPA80R1K2P7XKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	84A
	Maximum Drain Source Voltage Vds	40V
	Series	IPA
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2.9mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	81W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 84A
	Maximum Drain Source Voltage Vds 40V
	Series IPA
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2.9mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 81W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPA80R1K2P7XKSA1

The Infineon N-channel MOSFET provide a maximum continous drain current is 4.5 A and drain source voltage is 800 V. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. The operating temperature of MOSFET is ranges from -55 °C to 150 °C.

Best-in-class performance.

Enabling higher power density designs

BOM savings and lower assembly costs

Easy to drive and to parallel

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs