Infineon N-Channel MOSFET, 4.5 A, 800 V, 3-Pin TO-220 FP IPA80R1K2P7XKSA1
- RS Stock No.:
- 242-0986
- Mfr. Part No.:
- IPA80R1K2P7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£2.66
(exc. VAT)
£3.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 418 unit(s) ready to ship
- Plus 999,999,580 unit(s) shipping from 02 July 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £1.33 | £2.66 |
| 20 - 48 | £1.195 | £2.39 |
| 50 - 98 | £1.135 | £2.27 |
| 100 - 198 | £1.05 | £2.10 |
| 200 + | £0.97 | £1.94 |
*price indicative
- RS Stock No.:
- 242-0986
- Mfr. Part No.:
- IPA80R1K2P7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.5 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.5 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
The Infineon N-channel MOSFET provide a maximum continous drain current is 4.5 A and drain source voltage is 800 V. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. The operating temperature of MOSFET is ranges from -55 °C to 150 °C.
Best-in-class performance.
Enabling higher power density designs
BOM savings and lower assembly costs
Easy to drive and to parallel
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Enabling higher power density designs
BOM savings and lower assembly costs
Easy to drive and to parallel
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
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