Vishay EF Type N-Channel Power MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247AC SIHG026N60EF-GE3
- RS Stock No.:
- 239-8629
- Mfr. Part No.:
- SIHG026N60EF-GE3
- Brand:
- Vishay
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- 495 unit(s) shipping from 22 June 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £11.59 |
| 5 - 9 | £10.90 |
| 10 - 24 | £10.05 |
| 25 - 49 | £9.78 |
| 50 + | £9.53 |
*price indicative
- RS Stock No.:
- 239-8629
- Mfr. Part No.:
- SIHG026N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 521W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 521W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - SIHG026N60EF-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding power-electronics environments, particularly in automotive and industrial systems. It operates as an N-type depletion-channel device in a through-hole surface package suitable for engineers requiring robust thermal and electrical performance across a wide temperature range.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 95A continuous drain current supports heavy load handling • 0.023Ω Rds(on) reduces conduction losses under load • 521W power dissipation allows sustained thermal performance • 63nC typical gate charge offers predictable switching behaviour • 30V gate tolerance ensures compatibility with common drive voltages
Applications
• Suitable for traction inverter stages in vehicle powertrain electronics • Ideal for high-voltage power supplies and converters • Used for industrial motor drive switching assemblies • Can be used for high-current DC-DC conversion in automation systems
What mounting style does this device use and why does it matter?
It is supplied in a TO-247AC surface-mount package which facilitates secure heat-sinking and straightforward PCB or heatsink attachment for efficient thermal management.
How does the device perform across temperature extremes?
The transistor is rated to operate from -55 to +150°C, enabling use in harsh ambient conditions and high-temperature enclosures.
What gate drive considerations should be observed?
The maximum Vgs is 30V
designers should ensure gate drivers do not exceed this level to prevent gate overstress and ensure reliable switching.
What standard addresses its suitability for automotive use?
It meets the automotive AEC-Q101 standard, indicating it has been qualified for vehicle electronic applications under that specification.
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