Vishay EF Type N-Channel Power MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247AC

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Subtotal (1 tube of 25 units)*

£172.25

(exc. VAT)

£206.75

(inc. VAT)

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25 - 25£6.89£172.25
50 +£6.477£161.93

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RS Stock No.:
239-8628
Mfr. Part No.:
SIHG026N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

95A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-247AC

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.023Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

521W

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - SIHG026N60EF-GE3


This power MOSFET is a high-voltage switching transistor designed for demanding power-electronics environments, particularly in automotive and industrial systems. It operates as an N-type depletion-channel device in a through-hole surface package suitable for engineers requiring robust thermal and electrical performance across a wide temperature range.

Features and Benefits:


• 650V drain rating enables high-voltage switching applications • 95A continuous drain current supports heavy load handling • 0.023Ω Rds(on) reduces conduction losses under load • 521W power dissipation allows sustained thermal performance • 63nC typical gate charge offers predictable switching behaviour • 30V gate tolerance ensures compatibility with common drive voltages

Applications


• Suitable for traction inverter stages in vehicle powertrain electronics • Ideal for high-voltage power supplies and converters • Used for industrial motor drive switching assemblies • Can be used for high-current DC-DC conversion in automation systems

What mounting style does this device use and why does it matter?


It is supplied in a TO-247AC surface-mount package which facilitates secure heat-sinking and straightforward PCB or heatsink attachment for efficient thermal management.

How does the device perform across temperature extremes?


The transistor is rated to operate from -55 to +150°C, enabling use in harsh ambient conditions and high-temperature enclosures.

What gate drive considerations should be observed?


The maximum Vgs is 30V

designers should ensure gate drivers do not exceed this level to prevent gate overstress and ensure reliable switching.

What standard addresses its suitability for automotive use?


It meets the automotive AEC-Q101 standard, indicating it has been qualified for vehicle electronic applications under that specification.

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