Vishay EF Type N-Channel MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220 SiHA17N80AEF-GE3
- RS Stock No.:
- 239-8622
- Mfr. Part No.:
- SiHA17N80AEF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
£5.55
(exc. VAT)
£6.66
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £2.775 | £5.55 |
| 20 - 98 | £2.605 | £5.21 |
| 100 - 198 | £2.355 | £4.71 |
| 200 - 498 | £2.22 | £4.44 |
| 500 + | £2.08 | £4.16 |
*price indicative
- RS Stock No.:
- 239-8622
- Mfr. Part No.:
- SiHA17N80AEF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.31Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.31Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay EF series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
Low figure-of-merit
Low effective capacitance
Low switching and conduction losses
Related links
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