Infineon OptiMOS™ N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

View all MOSFETs

Subtotal (1 reel of 5000 units)*

£3,330.00

(exc. VAT)

£3,995.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
5000 +£0.666£3,330.00

*price indicative

RS Stock No.:
236-3639
Mfr. Part No.:
BSC004NE2LS5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

479 A

Maximum Drain Source Voltage

25 V

Series

OptiMOS™

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00045 Ω

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

1

The Infineon OptiMOS power MOSFET offers benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.

Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links