Infineon OptiMOS™ N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

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Subtotal (1 reel of 5000 units)*

£3,330.00

(exc. VAT)

£3,995.00

(inc. VAT)

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Units
Per unit
Per Reel*
5000 +£0.666£3,330.00

*price indicative

RS Stock No.:
236-3639
Mfr. Part No.:
BSC004NE2LS5ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

479 A

Maximum Drain Source Voltage

25 V

Package Type

TDSON

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00045 Ω

Maximum Gate Threshold Voltage

1.5V

Number of Elements per Chip

1

The Infineon OptiMOS power MOSFET offers benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.

Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free

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