Infineon OptiMOS™ Type N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1
- RS Stock No.:
- 236-3641
- Mfr. Part No.:
- BSC004NE2LS5ATMA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
£12.85
(exc. VAT)
£15.40
(inc. VAT)
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In Stock
- Plus 4,970 unit(s) shipping from 03 August 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.57 | £12.85 |
| 50 - 120 | £2.264 | £11.32 |
| 125 - 245 | £2.108 | £10.54 |
| 250 - 495 | £1.98 | £9.90 |
| 500 + | £1.828 | £9.14 |
*price indicative
- RS Stock No.:
- 236-3641
- Mfr. Part No.:
- BSC004NE2LS5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 479A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.45mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.49mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 479A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.45mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Operating Temperature 175°C | ||
Length 5.49mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.
Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free
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