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Infineon IPD Type P-Channel MOSFET, 9 A, 150 V Enhancement, 3-Pin TO-252 IPD42DP15LMATMA1

RS Stock No.:: 235-4859
Mfr. Part No.:: IPD42DP15LMATMA1
Brand:: Infineon

Infineon IPD Type P-Channel MOSFET, 9 A, 150 V Enhancement, 3-Pin TO-252 IPD42DP15LMATMA1

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Subtotal (1 pack of 2 units)*

£3.22

(exc. VAT)

£3.86

(inc. VAT)

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In Stock

2,316 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£1.61	£3.22
20 - 48	£1.45	£2.90
50 - 98	£1.35	£2.70
100 - 198	£1.255	£2.51
200 +	£1.16	£2.32

*price indicative

RS Stock No.:: 235-4859
Mfr. Part No.:: IPD42DP15LMATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	9A
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	420mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	-43nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Length	6.73mm
	Height	2.41mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 9A
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 420mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs -43nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Length 6.73mm
	Height 2.41mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD42DP15LMATMA1

The Infineon OptiMOS™ P-Channel MOSFETs 150V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Ideal for high and low switching frequency

Avalanche ruggedness

Industry standard footprint surface mount package

Robust, reliable performance

Increased security of supply