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Infineon IPD Type P-Channel MOSFET, 13.9 A, 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1

RS Stock No.:: 235-4855
Mfr. Part No.:: IPD18DP10LMATMA1
Brand:: Infineon

Infineon IPD Type P-Channel MOSFET, 13.9 A, 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1

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Subtotal (1 pack of 5 units)*

£6.95

(exc. VAT)

£8.35

(inc. VAT)

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In Stock

2,460 unit(s) ready to ship

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Units	Per unit	Per Pack*
5 - 45	£1.39	£6.95
50 - 120	£1.238	£6.19
125 - 245	£1.168	£5.84
250 - 495	£1.084	£5.42
500 +	£1.00	£5.00

*price indicative

RS Stock No.:: 235-4855
Mfr. Part No.:: IPD18DP10LMATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	13.9A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	IPD
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	178mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	-42nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	83W
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	2.41mm
	Width	6.22 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 13.9A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series IPD
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 178mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs -42nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 83W
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 2.41mm
	Width 6.22 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPD18DP10LMATMA1

The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Available in 4 different packages

Wide range

Normal level and logic level availability

Ideal for high and low switching frequency

Easy Interface to MCU

Low design complexity