Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A

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Subtotal (1 pack of 5 units)*

£6.18

(exc. VAT)

£7.415

(inc. VAT)

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Last RS stock
  • Final 2,940 unit(s), ready to ship
Units
Per unit
Per Pack*
5 - 45£1.236£6.18
50 - 95£1.048£5.24
100 - 245£0.896£4.48
250 - 995£0.878£4.39
1000 +£0.61£3.05

*price indicative

Packaging Options:
RS Stock No.:
234-7153
Mfr. Part No.:
RJK0391DPA-00#J5A
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

30V

Package Type

WPAK

Series

BEAM

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0029Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

Pb-Free, Halogen-Free

Width

5.9 mm

Length

6.1mm

Height

0.85mm

Automotive Standard

No

The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.

High speed switching

Low drive current

High density mounting

Low on-resistance

Pb-free

Halogen-free

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