Infineon OptiMOS™ N-Channel MOSFET, 288 A, 60 V, 8-Pin PQFN 3 x 3 ISZ034N06LM5ATMA1
- RS Stock No.:
- 233-4397
- Mfr. Part No.:
- ISZ034N06LM5ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.20
(exc. VAT)
£15.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 3,430 unit(s) ready to ship
- Plus 999,996,560 unit(s) shipping from 05 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.32 | £13.20 |
| 50 - 90 | £1.254 | £12.54 |
| 100 - 240 | £1.201 | £12.01 |
| 250 - 490 | £1.148 | £11.48 |
| 500 + | £1.069 | £10.69 |
*price indicative
- RS Stock No.:
- 233-4397
- Mfr. Part No.:
- ISZ034N06LM5ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 288 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | OptiMOS™ | |
| Package Type | PQFN 3 x 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.0034 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 288 A | ||
Maximum Drain Source Voltage 60 V | ||
Series OptiMOS™ | ||
Package Type PQFN 3 x 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.0034 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Number of Elements per Chip 1 | ||
The Infineon 60 V power MOSFET ISZ034N06LM5 comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies (SMPS), for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Very low voltage overshoot
Ultra low charges
Ultra low charges
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