Infineon CoolGaN Type N-Channel MOSFET, 10 A, 600 V Enhancement, 8-Pin LSON IGLD60R190D1AUMA3
- RS Stock No.:
- 232-0419
- Mfr. Part No.:
- IGLD60R190D1AUMA3
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
£3.03
(exc. VAT)
£3.64
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 2,040 unit(s), ready to ship
Units | Per unit |
|---|---|
| 1 - 9 | £3.03 |
| 10 - 24 | £2.88 |
| 25 - 49 | £2.81 |
| 50 - 99 | £2.64 |
| 100 + | £2.46 |
*price indicative
- RS Stock No.:
- 232-0419
- Mfr. Part No.:
- IGLD60R190D1AUMA3
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolGaN | |
| Package Type | LSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolGaN | ||
Package Type LSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Related links
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