Infineon CoolGaN N-Channel MOSFET, 10 A, 600 V, 8-Pin LSON-8 IGLD60R190D1AUMA3
- RS Stock No.:
- 232-0418
- Mfr. Part No.:
- IGLD60R190D1AUMA3
- Brand:
- Infineon
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 232-0418
- Mfr. Part No.:
- IGLD60R190D1AUMA3
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | LSON-8 | |
| Series | CoolGaN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.19 Ω | |
| Maximum Gate Threshold Voltage | 1.6V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type LSON-8 | ||
Series CoolGaN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.19 Ω | ||
Maximum Gate Threshold Voltage 1.6V | ||
Number of Elements per Chip 1 | ||
The Infineon 600V enhancement-mode power transistor offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. The gallium nitride CoolGaN 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. Its improves system efficiency, improves power density and enables higher operating frequency.
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
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