Vishay TrenchFET Type N-Channel MOSFET, 350.8 A, 30 V Enhancement, 8-Pin SO-8 SiR500DP-T1-RE3

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Subtotal (1 pack of 5 units)*

£9.12

(exc. VAT)

£10.945

(inc. VAT)

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Temporarily out of stock
  • 5,305 unit(s) shipping from 29 December 2025
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Units
Per unit
Per Pack*
5 - 45£1.824£9.12
50 - 120£1.548£7.74
125 - 245£1.458£7.29
250 - 495£1.37£6.85
500 +£0.912£4.56

*price indicative

Packaging Options:
RS Stock No.:
228-2902
Mfr. Part No.:
SiR500DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

350.8A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.47mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104.1W

Typical Gate Charge Qg @ Vgs

120nC

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 30 V MOSFET.

100 % Rg and UIS tested

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