MPN

Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7XTMA1

RS Stock No.:: 225-0580
Mfr. Part No.:: IPDQ60R010S7XTMA1
Brand:: Infineon

Infineon IPDQ60R010S7 Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7XTMA1

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Subtotal (1 unit)*

£16.04

(exc. VAT)

£19.25

(inc. VAT)

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Temporarily out of stock

Shipping from 25 May 2026

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Units	Per unit
1 - 1	£16.04
2 - 4	£15.24
5 - 9	£14.60
10 - 24	£13.95
25 +	£12.99

*price indicative

RS Stock No.:: 225-0580
Mfr. Part No.:: IPDQ60R010S7XTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	600V
	Series	IPDQ60R010S7
	Package Type	HDSOP
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	318nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	694W
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Length	15.1mm
	Width	2.35 mm
	Standards/Approvals	No
	Height	21.06mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 600V
	Series IPDQ60R010S7
	Package Type HDSOP
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 318nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 694W
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Length 15.1mm
	Width 2.35 mm
	Standards/Approvals No
	Height 21.06mm
	Automotive Standard No

Datasheet-IPDQ60R010S7XTMA1

The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.

Minimizes conduction losses

Increases energy efficiency

More compact and easier designs

Eliminates or reduces heat sinks in solid-state design