Infineon IPDQ60R010S7 N-Channel MOSFET, 50 A, 600 V, 22-Pin QDPAK IPDQ60R010S7XTMA1
- RS Stock No.:
- 225-0580
- Mfr. Part No.:
- IPDQ60R010S7XTMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 225-0580
- Mfr. Part No.:
- IPDQ60R010S7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | QDPAK | |
| Series | IPDQ60R010S7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance | 0.01 Ω | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type QDPAK | ||
Series IPDQ60R010S7 | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Maximum Drain Source Resistance 0.01 Ω | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
The Infineon IPDQ60R010S7 is the N channel power MOSFET and it enables the best performance for low frequency switching applications. The MOSFET is optimized for static switching and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for liner rectification inSMPS and inverter topologies.
Minimizes conduction losses
Increases energy efficiency
More compact and easier designs
Eliminates or reduces heat sinks in solid-state design
Increases energy efficiency
More compact and easier designs
Eliminates or reduces heat sinks in solid-state design
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