Infineon IMD SiC N-Channel MOSFET, 64 A, 750 V, 22-Pin PG-HDSOP-22 IMDQ75R027M1HXUMA1

The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.

Infineon proprietary die attach technology
Cutting edge top side cooling package
Driver source pin available
Enhanced robustness to withstand bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control