Infineon IMD SiC N-Channel MOSFET, 81 A, 750 V, 22-Pin PG-HDSOP-22 IMDQ75R020M1HXUMA1
- RS Stock No.:
- 349-332
- Mfr. Part No.:
- IMDQ75R020M1HXUMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 349-332
- Mfr. Part No.:
- IMDQ75R020M1HXUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 81 A | |
| Maximum Drain Source Voltage | 750 V | |
| Package Type | PG-HDSOP-22 | |
| Series | IMD | |
| Mounting Type | Surface Mount | |
| Pin Count | 22 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 81 A | ||
Maximum Drain Source Voltage 750 V | ||
Package Type PG-HDSOP-22 | ||
Series IMD | ||
Mounting Type Surface Mount | ||
Pin Count 22 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- MY
The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.
Infineon proprietary die attach technology
Cutting edge top side cooling package
Driver source pin available
Enhanced robustness to withstand bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control
Cutting edge top side cooling package
Driver source pin available
Enhanced robustness to withstand bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control
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