MPN

Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7AXTMA1

RS Stock No.:: 225-0578
Mfr. Part No.:: IPDQ60R010S7AXTMA1
Brand:: Infineon

Infineon IPDQ60R010S7A Type N-Channel MOSFET, 50 A, 600 V N, 22-Pin HDSOP IPDQ60R010S7AXTMA1

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Subtotal (1 unit)*

£19.04

(exc. VAT)

£22.85

(inc. VAT)

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In Stock

Plus 41 unit(s) shipping from 19 January 2026

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Units	Per unit
1 - 1	£19.04
2 - 4	£18.09
5 - 9	£17.33
10 - 24	£16.56
25 +	£15.42

*price indicative

RS Stock No.:: 225-0578
Mfr. Part No.:: IPDQ60R010S7AXTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	600V
	Series	IPDQ60R010S7A
	Package Type	HDSOP
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	10mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	694W
	Typical Gate Charge Qg @ Vgs	318nC
	Forward Voltage Vf	0.82V
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	15.1mm
	Height	21.06mm
	Width	2.35 mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 600V
	Series IPDQ60R010S7A
	Package Type HDSOP
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 10mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 694W
	Typical Gate Charge Qg @ Vgs 318nC
	Forward Voltage Vf 0.82V
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 15.1mm
	Height 21.06mm
	Width 2.35 mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet-IPDQ60R010S7AXTMA1

The Infineon IPDQ60R010S7A is a high voltage power MOSFET,designed as static switch according to the super junction (SJ) principle. The mosfet combines the experience of the leading SJ MOSFET supplier with high class innovation enabling low RDS (on) in QDPAK package. The S7A series is optimised for low frequency switching and high current. application like circuit breakers.

Minimizes conduction losses

Increases energy efficiency

More compact and easier designs

Lower TCO cost or BOM cost