Infineon CoolMOS™ P7 N-Channel MOSFET, 18 A, 600 V, 3-Pin D2PAK IPB60R180P7ATMA1
- RS Stock No.:
- 222-4895
- Mfr. Part No.:
- IPB60R180P7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.80
(exc. VAT)
£11.75
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 925 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.96 | £9.80 |
| 50 - 120 | £1.744 | £8.72 |
| 125 - 245 | £1.626 | £8.13 |
| 250 - 495 | £1.51 | £7.55 |
| 500 + | £1.412 | £7.06 |
*price indicative
- RS Stock No.:
- 222-4895
- Mfr. Part No.:
- IPB60R180P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Series | CoolMOS™ P7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Series CoolMOS™ P7 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Related links
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