Infineon CoolMOS™ P7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 FP IPA60R180P7SXKSA1
- RS Stock No.:
- 214-8995
- Mfr. Part No.:
- IPA60R180P7SXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£39.50
(exc. VAT)
£47.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,650 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.79 | £39.50 |
| 100 - 200 | £0.64 | £32.00 |
| 250 - 450 | £0.593 | £29.65 |
| 500 - 950 | £0.553 | £27.65 |
| 1000 + | £0.514 | £25.70 |
*price indicative
- RS Stock No.:
- 214-8995
- Mfr. Part No.:
- IPA60R180P7SXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ P7 | |
| Package Type | TO-220 FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.18 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ P7 | ||
Package Type TO-220 FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.18 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.
Excellent ESD robustness >2kV (HBM) for all products
Suitable for hard and soft switching due to an outstanding commutation ruggedness
Suitable for hard and soft switching due to an outstanding commutation ruggedness
Related links
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