Infineon CoolMOS™ P7 N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220 FP IPA60R180P7SXKSA1

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Subtotal (1 tube of 50 units)*

£39.50

(exc. VAT)

£47.50

(inc. VAT)

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  • 1,650 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50£0.79£39.50
100 - 200£0.64£32.00
250 - 450£0.593£29.65
500 - 950£0.553£27.65
1000 +£0.514£25.70

*price indicative

RS Stock No.:
214-8995
Mfr. Part No.:
IPA60R180P7SXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™ P7

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.18 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler.

Excellent ESD robustness >2kV (HBM) for all products
Suitable for hard and soft switching due to an outstanding commutation ruggedness

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