MPN

Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263

RS Stock No.:: 222-4894
Mfr. Part No.:: IPB60R180P7ATMA1
Brand:: Infineon

Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

£755.00

(exc. VAT)

£906.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 04 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
1000 +	£0.755	£755.00

*price indicative

RS Stock No.:: 222-4894
Mfr. Part No.:: IPB60R180P7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	600V
	Series	IPB65R
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 600V
	Series IPB65R
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R180P7ATMA1

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available