Infineon CoolMOS™ N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK IPB60R090CFD7ATMA1

Subtotal (1 reel of 1000 units)*

£1,384.00

(exc. VAT)

£1,661.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
1000 +£1.384£1,384.00

*price indicative

RS Stock No.:
222-4890
Mfr. Part No.:
IPB60R090CFD7ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

CoolMOS™

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations

Related links