MPN

Infineon IPB60R Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

RS Stock No.:: 222-4890
Mfr. Part No.:: IPB60R090CFD7ATMA1
Brand:: Infineon

Infineon IPB60R Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263

Subtotal (1 reel of 1000 units)*

£1,384.00

(exc. VAT)

£1,661.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 25 May 2026

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Units	Per unit	Per Reel*
1000 +	£1.384	£1,384.00

*price indicative

RS Stock No.:: 222-4890
Mfr. Part No.:: IPB60R090CFD7ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	600V
	Series	IPB60R
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 600V
	Series IPB60R
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPB60R090CFD7ATMA1

The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and EOSS

Best-in-class RDS(on)/package combinations