Infineon CoolMOS™ N-Channel MOSFET, 25 A, 600 V, 3-Pin D2PAK IPB60R090CFD7ATMA1
- RS Stock No.:
- 222-4890
- Mfr. Part No.:
- IPB60R090CFD7ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 1000 units)*
£1,384.00
(exc. VAT)
£1,661.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 06 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.384 | £1,384.00 |
*price indicative
- RS Stock No.:
- 222-4890
- Mfr. Part No.:
- IPB60R090CFD7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R090CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
Related links
- Infineon CoolMOS™ N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R090CFD7ATMA1
- Vishay SiHB125N60EF N-Channel MOSFET 600 V, 3-Pin D2PAK SIHB125N60EF-GE3
- STMicroelectronics ST N-Channel MOSFET Module 600 V, 3-Pin D2PAK STB33N60DM6
- STMicroelectronics ST SiC N-Channel MOSFET Module 600 V Depletion, 3-Pin D2PAK STB33N60DM6
- Infineon CoolMOS™ CFD7 N-Channel MOSFET 600 V, 3-Pin TO-220 IPP60R090CFD7XKSA1
- ROHM N-Channel MOSFET 600 V, 3-Pin TO-3PF R6025JNZC17
- Toshiba DTMOSIV N-Channel MOSFET 600 VS5X(M
- Infineon OptiMOS™ 3 N-Channel MOSFET 250 V, 3-Pin D2PAK IPB600N25N3GATMA1