N-Channel MOSFET, 22 A, 600 V, 3-Pin D2PAK Infineon IPB60R099C7ATMA1
- RS Stock No.:
- 222-4892
- Mfr. Part No.:
- IPB60R099C7ATMA1
- Brand:
- Infineon
3568 In stock - FREE next working day delivery available
Price Each (On a Reel of 1000)
£2.24
(exc. VAT)
£2.69
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £2.24 | £2,240.00 |
*price indicative
- RS Stock No.:
- 222-4892
- Mfr. Part No.:
- IPB60R099C7ATMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | D2PAK (TO-263) |
| Series | CoolMOS™ C7 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 99 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
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