Infineon CoolMOS™ N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK IPB60R055CFD7ATMA1
- RS Stock No.:
- 222-4889
- Mfr. Part No.:
- IPB60R055CFD7ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£9.72
(exc. VAT)
£11.66
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 360 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.86 | £9.72 |
| 10 - 18 | £4.375 | £8.75 |
| 20 - 48 | £4.08 | £8.16 |
| 50 - 98 | £3.84 | £7.68 |
| 100 + | £3.55 | £7.10 |
*price indicative
- RS Stock No.:
- 222-4889
- Mfr. Part No.:
- IPB60R055CFD7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Series | CoolMOS™ | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 55 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Series CoolMOS™ | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 55 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R055CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and EOSS
Best-in-class RDS(on)/package combinations
Related links
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